SP8M4FRATB

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Current Continuous Drain Id25

9A Ta 7A Ta

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Standard

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2016

Drain Currentmax Abs Id

9A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

36A

Input Capacitance Ciss Max Vds

1190pF @ 10V 2600pF @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.025Ohm

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Terminal Formu

GULL WING

Fet Type

N and P-Channel

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

15nC @ 5V, 25nC @ 5V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Parça Durumu

Active

Rds On Max Id Vgs

18m Ω @ 9A, 10V, 28m Ω @ 7A, 10V

Power Max

2W

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)