SP8M41HZGTB

Teknik Özellikler

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

15 ns

Number Of Channels

2 Channel

Vds Drainsource Breakdown Voltage

80 V

Input Capacitance Ciss Max Vds

600pF @ 10V, 1000pF @ 10V

Minimum Operating Temperature

- 55 C

Montaj Stili

SMD/SMT

Pd Power Dissipation

2 W

Drain To Source Voltage Vdss

80V

Typical Turnon Delay Time

12 ns

Id Continuous Drain Current

3.4 A, 2.6 A

Channel Mode

Enhancement

RoHS

Details

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Turnoff Delay Time

40 ns

Current Continuous Drain Id25

3.4A (Ta), 2.6A (Ta)

Tedarikçi Cihaz Paketi

8-SOP

Qualification

AEC-Q101

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C (TJ)

Fet Feature

Standard

Fabrika Paket Adedi

2500

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Max Id Vgs

130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V

Ürün Tipi

MOSFET

Power Max

2W (Ta)

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Qg Gate Charge

9.2 nC

Rds On Drainsource Resistance

130 mOhms

Ürün Durumu

Active

Ambalaj

Cut Tape

Seri

Automotive, AEC-Q101

Technology

Si

Gate Charge Qg Max Vgs

9.2nC @ 5V, 11.5nC @ 5V

Transistor Type

1 N-Channel, 1 P-Channel

Fet Type

N and P-Channel

Configuration

Dual

Transistor Polarity

N-Channel, P-Channel