SP8K22HZGTB

Teknik Özellikler

Package Type

SOP

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

46mOhm @ 4.5A, 10V

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Drainsource Resistance

46 mOhms

Qg Gate Charge

9.6 nC

Transistor Type

2 N-Channel

Gate Charge Qg Max Vgs

9.6nC @ 5V

Technology

Si

Seri

SP8K22

Input Capacitance Ciss Max Vds

550pF @ 10V

Vds Drainsource Breakdown Voltage

45 V

Number Of Channels

2 Channel

Channel Type

N

Rise Time

18 ns

Pin Sayısı

8

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

2 W

Montaj Stili

SMD/SMT

Continuous Drain Current Id

4.5A

Current Continuous Drain Id25

4.5A (Ta)

Vgs Th Gatesource Threshold Voltage

2.5 V

RoHS

Details

Typical Turnon Delay Time

12 ns

Drain To Source Voltage Vdss

45V

Fabrika Paket Adedi

2500

Çalışma Sıcaklığı

150°C (TJ)

Fet Feature

Standard

Number Of Elements Per Chip

2

Power Max

1.4W (Ta)

Ürün Tipi

MOSFET

Ürün Durumu

Active

Ambalaj

Cut Tape

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Transistor Polarity

N Channel

Configuration

Dual

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

8-SOP

Typical Turnoff Delay Time

42 ns