SP8J5FRATB

Teknik Özellikler

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.028Ohm

Pulsed Drain Currentmax Idm

28A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

2.5V @ 1mA

Drain Currentmax Abs Id

7A

Çalışma Sıcaklığı

150°C

Fet Feature

Logic Level Gate, 4V Drive

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PDSO-G8

Current Continuous Drain Id25

7A Ta

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

28m Ω @ 7A, 10V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Terminal Formu

GULL WING

Fet Type

2 P-Channel (Dual)

Terminal Sayısı

8

Fabrika Tedarik Süresi

8 Weeks