SH8KA2GZETB

Teknik Özellikler

Vgsth Max Id

2.5V @ 1mA

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Jesd30 Code

R-PDSO-G8

Parça Durumu

Active

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Current Continuous Drain Id25

8A

Rds On Max Id Vgs

28m Ω @ 8A, 10V

Input Capacitance Ciss Max Vds

330pF @ 15V

Drain To Source Voltage Vdss

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Drainsource On Resistancemax

0.028Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

8nC @ 10V

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

2.6 mJ

Fabrika Tedarik Süresi

20 Weeks

Yüzey Montaj

YES

Power Max

2.8W

Yayın Yılı

2017

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

16A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED