SH8J31GZETB

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ds Breakdown Voltagemin

60V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

2500pF @ 10V

Current Continuous Drain Id25

4.5A

Rds On Max Id Vgs

70m Ω @ 4.5A, 10V

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Vgsth Max Id

3V @ 1mA

Parça Durumu

Active

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G8

Avalanche Energy Rating Eas

14 mJ

Fabrika Tedarik Süresi

20 Weeks

Fet Type

2 P-Channel (Dual)

Drain Currentmax Abs Id

4.5A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

18A

Transistor Application

SWITCHING

Yüzey Montaj

YES

Power Max

2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Drain To Source Voltage Vdss

60V

Drainsource On Resistancemax

0.085Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

40nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)