RGWS00TS65DGC13

Teknik Özellikler

RoHS

Details

Td Onoff25c

46ns/145ns

Pd Power Dissipation

245 W

Maximum Gate Emitter Voltage

±30V

Switching Energy

980μJ (on), 910μJ (off)

Ambalaj

Tube

Montaj Stili

Through Hole

Configuration

Single Collector, Single Emitter, Single Gate

Currentcollector Ic Max

88 A

Ürün Durumu

Active

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current At25 C

88 A

Giriş Tipi

Standard

Igbt Type

Trench Field Stop

Ürün Tipi

IGBT Transistors

Package Type

TO-247GE

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo Max

650 V

Continuous Collector Current Ic Max

54 A

Test Conditions

400V, 50A, 10Ohm, 15V

Fabrika Paket Adedi

600

Current Collector Pulsed Icm

150 A

Minimum Operating Temperature

- 40 C

Reverse Recovery Time Trr

88 ns

Kılıf / Paket

TO-247-3

Maximum Collector Emitter Voltage

650 V

Power Max

245 W

Vceon Max Vge Ic

2V @ 15V, 50A

Tedarikçi Cihaz Paketi

TO-247G

Collectoremitter Saturation Voltage

1.6 V

Technology

Si

Maks. Çalışma Sıcaklığı

+ 175 C

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge

108 nC

Paket

Tube