RGW80TS65EHRC11

Teknik Özellikler

Giriş Tipi

Standard

Ürün Durumu

Active

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current At25 C

80 A

Ambalaj

Tube

Pd Power Dissipation

214 W

Maximum Gate Emitter Voltage

±30V

Currentcollector Ic Max

80 A

Montaj Stili

Through Hole

Configuration

Single

RoHS

Details

Td Onoff25c

43ns/148ns

Collectoremitter Saturation Voltage

1.5V

Technology

Si

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Tube

Continuous Collector Current

80A

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge

110 nC

Channel Type

N

Reverse Recovery Time Trr

86 ns

Power Dissipation

214W

Tedarikçi Cihaz Paketi

TO-247N

Vceon Max Vge Ic

1.9V @ 15V, 40A

Power Max

214 W

Kılıf / Paket

TO-247-3

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 20A, 10Ohm, 15V

Continuous Collector Current Ic Max

160 A

Fabrika Paket Adedi

30

Current Collector Pulsed Icm

160 A

Minimum Operating Temperature

- 40 C

Pin Sayısı

3

Package Type

TO-247N

Montaj Tipi

Through Hole

Igbt Type

Trench Field Stop

Ürün Tipi

IGBT Transistors

Collector Emitter Voltage Vceo Max

650 V