RGW80TK65EGVC11

Teknik Özellikler

Montaj Tipi

Through Hole

Ürün Tipi

IGBT Transistors

Igbt Type

Trench Field Stop

Collector Emitter Voltage Vceo Max

650 V

Test Conditions

400V, 40A, 10Ohm, 15V

Fabrika Paket Adedi

450

Current Collector Pulsed Icm

160 A

Minimum Operating Temperature

- 40 C

Reverse Recovery Time Trr

102 ns

Power Max

81 W

Vceon Max Vge Ic

1.9V @ 15V, 40A

Tedarikçi Cihaz Paketi

TO-3PFM

Kılıf / Paket

TO-3PFM, SC-93-3

Technology

Si

Collectoremitter Saturation Voltage

1.9 V

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Tube

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge

110 nC

RoHS

Details

Td Onoff25c

44ns/143ns

Switching Energy

760μJ (on), 720μJ (off)

Ambalaj

Tube

Pd Power Dissipation

81 W

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Currentcollector Ic Max

39 A

Montaj Stili

Through Hole

Configuration

Single

Ürün Durumu

Active

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current At25 C

39 A

Giriş Tipi

Standard