RGW50TS65GC11

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current At25 C

50 A

Ürün Durumu

Active

Mounting

Through Hole

Rad Hardened

No

Giriş Tipi

Standard

Td Onoff25c

35ns/102ns

RoHS

Details

Currentcollector Ic Max

50 A

Montaj Stili

Through Hole

Configuration

Single

Switching Energy

390μJ (on), 430μJ (off)

Ambalaj

Tube

Pd Power Dissipation

156 W

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Power Dissipation

156W

Tedarikçi Cihaz Paketi

TO-247N

Vceon Max Vge Ic

1.9V @ 15V, 25A

Power Max

156 W

Kılıf / Paket

TO-247-3

Continuous Collector Current

50A

Paket

Tube

Gate Charge

73 nC

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Technology

Si

Collectoremitter Saturation Voltage

1.5V

Maks. Çalışma Sıcaklığı

+ 175 C

Msl

MSL 1 - Unlimited

Collector Emitter Voltage Vceo Max

650 V

Package Type

TO-247N

Montaj Tipi

Through Hole

Ürün Tipi

IGBT Transistors

Igbt Type

Trench Field Stop

Fabrika Paket Adedi

30

Current Collector Pulsed Icm

100 A

Minimum Operating Temperature

- 40 C

Pin Sayısı

3 +Tab

Collector Current Dc

25(A)

Test Conditions

400V, 25A, 10Ohm, 15V

Continuous Collector Current Ic Max

25 A