RGTV80TS65GC11

Teknik Özellikler

Collector Emitter Voltage Vceo Max

650 V

Montaj Tipi

Through Hole

Ürün Tipi

IGBT Transistors

Igbt Type

Trench Field Stop

Fabrika Paket Adedi

30

Minimum Operating Temperature

- 40 C

Current Collector Pulsed Icm

160 A

Test Conditions

400V, 40A, 10Ohm, 15V

Continuous Collector Current Ic Max

40 A

Tedarikçi Cihaz Paketi

TO-247N

Vceon Max Vge Ic

1.9V @ 15V, 40A

Power Max

234 W

Power Dissipation

234W

Kılıf / Paket

TO-247-3

Continuous Collector Current

78A

Paket

Tube

Gate Charge

81 nC

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Maks. Çalışma Sıcaklığı

+ 175 C

Technology

Si

Collectoremitter Saturation Voltage

1.5V

Msl

MSL 1 - Unlimited

Td Onoff25c

39ns/113ns

RoHS

Details

Currentcollector Ic Max

78 A

Configuration

Single

Montaj Stili

Through Hole

Ambalaj

Tube

Switching Energy

1.02mJ (on), 710μJ (off)

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Pd Power Dissipation

234 W

Continuous Collector Current At25 C

78 A

Voltage Collector Emitter Breakdown Max

650 V

Ürün Durumu

Active

Giriş Tipi

Standard