RGS80TSX2GC11

Teknik Özellikler

Maximum Gate Emitter Voltage

±30V

Test Conditions

600V, 40A, 10Ohm, 15V

Configuration

Single

Ürün Durumu

Active

Currentcollector Ic Max

80 A

Collectoremitter Saturation Voltage

1.7V

Power Max

555 W

Voltage Collector Emitter Breakdown Max

1200 V

Pd Power Dissipation

555 W

Collector Emitter Voltage Vceo Max

1.2 kV

Tedarikçi Cihaz Paketi

TO-247N

Igbt Type

Trench Field Stop

Td Onoff25c

49ns/199ns

Giriş Tipi

Standard

Minimum Operating Temperature

- 40 C

Continuous Collector Current

80A

Montaj Stili

Through Hole

Fabrika Paket Adedi

30

Ambalaj

Tube

Gate Charge

104 nC

Current Collector Pulsed Icm

120 A

Technology

Si

Package Type

TO-247N

RoHS

Details

Kılıf / Paket

TO-247-3

Maximum Collector Emitter Voltage

1200 V

Continuous Collector Current At25 C

80 A

Switching Energy

3mJ (on), 3.1mJ (off)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Paket

Tube

Power Dissipation

555W

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Tipi

Through Hole

Vceon Max Vge Ic

2.1V @ 15V, 40A

Pin Sayısı

3

Continuous Collector Current Ic Max

80 A

Ürün Tipi

IGBT Transistors