RGS80TSX2DGC11

Teknik Özellikler

Collectoremitter Saturation Voltage

1.7V

Power Max

555 W

Currentcollector Ic Max

80 A

Kapasitans

405uF

Configuration

Single

Ürün Durumu

Active

Maximum Gate Emitter Voltage

±30V

Test Conditions

600V, 40A, 10Ohm, 15V

Td Onoff25c

49ns/199ns

Giriş Tipi

Standard

Minimum Operating Temperature

- 40 C

Igbt Type

Trench Field Stop

Tedarikçi Cihaz Paketi

TO-247N

Pd Power Dissipation

555 W

Collector Emitter Voltage Vceo Max

1.2 kV

Voltage Collector Emitter Breakdown Max

1200 V

Tolerans

±3%

Technology

Si

RoHS

Y

Kılıf / Paket

TO-247N-3

Maximum Collector Emitter Voltage

1200 V

Continuous Collector Current At25 C

80 A

Package Type

TO-247N

Gate Charge

104 nC

Current Collector Pulsed Icm

120 A

Ambalaj

2.156in x 1.312in Oval Case

Fabrika Paket Adedi

30

Montaj Stili

Through Hole

Reverse Recovery Time Trr

198 ns

Continuous Collector Current

80A

Continuous Collector Current Ic Max

80 A

Ürün Tipi

IGBT Transistors

Vceon Max Vge Ic

2.1V @ 15V, 40A

Gerilim

370VAC

Montaj Tipi

Term: ¼in Solder Lug Quick-Connect, w/Stud Can

Maks. Çalışma Sıcaklığı

+ 175 C

Pin Sayısı

3

Paket

Tube

Power Dissipation

555W

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)