RBR10BM30AFHTL

Teknik Özellikler

Diode Type

Schottky

Terminal Formu

GULL WING

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Additional Feature

HIGH RELIABILITY

Reverse Currentmax

100μA

Output Currentmax

5A

Applications

GENERAL PURPOSE

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Rep Pk Reverse Voltagemax

30V

Montaj Tipi

Surface Mount

Terminal Pozisyonu

SINGLE

Voltage Forward Vf Max If

550mV @ 5A

Fabrika Tedarik Süresi

20 Weeks

Yüzey Montaj

YES

Current Reverse Leakage Vr

100μA @ 30V

Terminal Sayısı

2

Operating Temperature Max

150°C

Voltage Dc Reverse Vr Max

30V

Ambalaj

Tape & Reel (TR)

Number Of Phases

1

Parça Durumu

Active

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Forward Current

10A

Operating Temperature Junction

150°C Max

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2