RBQ20BGE65ATL

Teknik Özellikler

If Forward Current

20 A

Number Of Elements Per Chip

2

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Configuration

Dual Anode Common Cathode

Diode Type

Schottky

Repetitive Peak Reverse Voltage

65V

Vr Reverse Voltage

65 V

Package Type

TO-252

Montaj Tipi

Surface Mount

Fabrika Paket Adedi

2500

Voltage Forward Vf Max If

630 mV @ 10 A

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

+ 150 C

Vf Forward Voltage

630 mV

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vrrm Repetitive Reverse Voltage

65 V

Tedarikçi Cihaz Paketi

TO-252GE

Current Reverse Leakage Vr

200 μA @ 65 V

Voltage Dc Reverse Vr Max

65 V

Ambalaj

Cut Tape

Ir Reverse Current

200 uA

Ürün Durumu

Active

Ürün Tipi

Schottky Diodes & Rectifiers

RoHS

Details

Technology

Si

Operating Temperature Junction

150°C

Current Average Rectified Io Per Diode

20A

Montaj Stili

SMD/SMT

Ifsm Forward Surge Current

100 A