RBQ10NS45ATL

Teknik Özellikler

Diode Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Forward Current

10A

Operating Temperature Junction

150°C Max

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Fabrika Tedarik Süresi

12 Weeks

Voltage Dc Reverse Vr Max

45V

Ambalaj

Tape & Reel (TR)

Number Of Phases

1

Parça Durumu

Active

Current Reverse Leakage Vr

70μA @ 45V

Terminal Sayısı

2

Operating Temperature Max

150°C

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rep Pk Reverse Voltagemax

45V

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

SINGLE

Voltage Forward Vf Max If

650mV @ 5A

Montaj Tipi

Surface Mount

Diode Type

Schottky

Terminal Formu

GULL WING

Output Currentmax

5A

Reverse Currentmax

70μA

Applications

GENERAL PURPOSE

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Additional Feature

HIGH RELIABILITY