QS8M51TR

Teknik Özellikler

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

8

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

4.7nC @ 5V

Pin Sayısı

8

Number Of Elements

2

Kılıf / Paket

8-SMD, Flat Lead

Turn On Delay Time

10 ns

Current Continuous Drain Id25

2A 1.5A

Fabrika Tedarik Süresi

20 Weeks

Input Capacitance Ciss Max Vds

290pF @ 25V

Pulsed Drain Currentmax Idm

6A

Yayın Yılı

2015

Rds On Max Id Vgs

325m Ω @ 2A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

1.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Fet Type

N and P-Channel

Vgsth Max Id

2.5V @ 1mA

Max Power Dissipation

1.5W

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

100V

Pin Sayısı

8

Fet Feature

Logic Level Gate

Ambalaj

Tape & Reel (TR)

Temel Parça No

*M51

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.355Ohm

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

100V

Drain Currentmax Abs Id

2A