QS8K21TR

Teknik Özellikler

Transistor Element Material

SILICON

Max Power Dissipation

550mW

Vgsth Max Id

2.5V @ 1mA

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

30 ns

Drain Currentmax Abs Id

4A

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.075Ohm

Fall Time Typ

7 ns

Kurşunsuz Kodu

yes

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Drain To Source Voltage Vdss

45V

Turn On Delay Time

9 ns

Drain To Source Breakdown Voltage

45V

Kılıf / Paket

8-SMD, Flat Lead

Number Of Elements

2

JESD-609 Kodu

e2

Terminal Kaplaması

Tin/Copper (Sn/Cu)

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

5.4nC @ 5V

Pin Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

25ns

Terminal Sayısı

8

Parça Durumu

Active

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

4A