QS8K13TCR

Teknik Özellikler

Transistor Element Material

SILICON

Max Power Dissipation

550mW

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 1mA

Fet Type

2 N-Channel (Dual)

Kurşunsuz Kodu

yes

Drainsource On Resistancemax

0.039Ohm

Çalışma Sıcaklığı

150°C TJ

Drain Currentmax Abs Id

6A

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Fet Feature

Standard

Drain To Source Voltage Vdss

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qualification Status

Not Qualified

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SMD, Flat Lead

Number Of Elements

2

JESD-609 Kodu

e2

Parça Durumu

Active

Terminal Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Power Max

550mW

Gate Charge Qg Max Vgs

20nC @ 10V

Pin Sayısı

8

ECCN Kodu

EAR99

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Tepe Reflow Süresi (maks. sn)

10

Pulsed Drain Currentmax Idm

18A

Input Capacitance Ciss Max Vds

390pF @ 10V

Continuous Drain Current Id

6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

28m Ω @ 6A, 10V

Yayın Yılı

2012

Jesd30 Code

R-PDSO-F8

Fabrika Tedarik Süresi

20 Weeks