QS8J4TR

Teknik Özellikler

ECCN Kodu

EAR99

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Gate Charge Qg Max Vgs

13nC @ 10V

Pin Sayısı

8

Montaj Tipi

Surface Mount

Rise Time

20ns

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

8

Turn On Delay Time

8 ns

Drain To Source Breakdown Voltage

-30V

Kılıf / Paket

8-SMD, Flat Lead

Number Of Elements

2

JESD-609 Kodu

e2

Fabrika Tedarik Süresi

20 Weeks

Transistor Application

SWITCHING

Continuous Drain Current Id

4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Rds On Max Id Vgs

56m Ω @ 4A, 10V

Input Capacitance Ciss Max Vds

800pF @ 10V

Tepe Reflow Süresi (maks. sn)

10

Pulsed Drain Currentmax Idm

16A

Vgsth Max Id

2.5V @ 1mA

Fet Type

2 P-Channel (Dual)

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Turn Off Delay Time

80 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Max Power Dissipation

550mW

Number Of Channels

2

Ambalaj

Tape & Reel (TR)

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Drain To Source Voltage Vdss

30V

Drain Currentmax Abs Id

4A

RoHS Durumu

ROHS3 Compliant