QS5W2TR

Teknik Özellikler

Fabrika Tedarik Süresi

20 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Terminal Formu

GULL WING

Ambalaj

Cut Tape (CT)

Çalışma Sıcaklığı

150°C TJ

Max Power Dissipation

1.25W

Configuration

COMMON EMITTER, 2 ELEMENTS

Terminal Sayısı

5

Pin Sayısı

5

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Frequency Transition

320MHz

Transistor Element Material

SILICON

Transition Frequency

320MHz

Collectoremitter Breakdown Voltage

50V

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G5

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Breakdown Voltage

50V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

180 @ 50mA 3V

Vce Saturation Max Ib Ic

350mV @ 50mA, 1A

Transistor Type

2 NPN (Dual) Common Emitter

Power Max

1.25W

Polaritychannel Type

NPN

Kurşunsuz Kodu

yes

Yayın Yılı

2015

Collector Emitter Voltage Vceo

350mV

Kılıf / Paket

SOT-23-5 Thin, TSOT-23-5

Max Collector Current

3A

Current Collector Cutoff Max

1μA ICBO