QS5W1TR

Teknik Özellikler

Transistor Element Material

SILICON

Frequency Transition

270MHz

Parça Durumu

Active

Pin Sayısı

5

Terminal Sayısı

5

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transition Frequency

270MHz

Collectoremitter Breakdown Voltage

30V

Jesd30 Code

R-PDSO-G5

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

20 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Terminal Formu

GULL WING

Montaj

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Ambalaj

Cut Tape (CT)

Max Power Dissipation

1.25W

Configuration

COMMON EMITTER, 2 ELEMENTS

Polaritychannel Type

NPN

Kurşunsuz Kodu

yes

Yayın Yılı

2011

Collector Emitter Voltage Vceo

400mV

Kılıf / Paket

SOT-23-5 Thin, TSOT-23-5

Max Collector Current

3A

Current Collector Cutoff Max

1μA ICBO

Max Breakdown Voltage

30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

200 @ 500mA 2V

Vce Saturation Max Ib Ic

400mV @ 50mA, 1A

Power Max

1.25W

Transistor Type

2 NPN (Dual) Common Emitter