QH8MA4TCR

Teknik Özellikler

Max Power Dissipation

1.5W

Montaj Tipi

Surface Mount

Fet Type

N and P-Channel

Avalanche Energy Rating Eas

3.5 mJ

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Feature

Standard

Fabrika Tedarik Süresi

20 Weeks

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.016Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Pin Sayısı

2

Continuous Drain Current Id

8A

Montaj

Surface Mount

Rds On Max Id Vgs

16m Ω @ 9A, 10V

Current Continuous Drain Id25

9A 8A

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.5V @ 1mA

Drain To Source Voltage Vdss

30V

Yayın Yılı

2015

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-F8

Input Capacitance Ciss Max Vds

640pF @ 15V

Gate Charge Qg Max Vgs

15.5nC @ 10V

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8