QH8KA4TCR

Teknik Özellikler

Terminal Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

12nC @ 4.5V

Input Capacitance Ciss Max Vds

1400pF @ 10V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PDSO-F8

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2017

Drain To Source Voltage Vdss

30V

Vgsth Max Id

1.5V @ 1mA

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Rds On Max Id Vgs

17m Ω @ 7A, 4.5V

Current Continuous Drain Id25

9A

Pulsed Drain Currentmax Idm

40A

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

9A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.017Ohm

ECCN Kodu

EAR99

Power Max

1.5W

Fabrika Tedarik Süresi

20 Weeks

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Avalanche Energy Rating Eas

6.2 mJ

Fet Type

2 N-Channel (Dual)

Montaj Tipi

Surface Mount