QH8KA2TCR

Teknik Özellikler

Fabrika Tedarik Süresi

10 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

1.5 mJ

Drain To Source Resistance

25mOhm

Parça Durumu

Discontinued

Yüzey Montaj

YES

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F8

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Drain Currentmax Abs Id

4.5A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

12A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING