QH8KA1TCR

Teknik Özellikler

Fabrika Tedarik Süresi

20 Weeks

Power Max

2.4W

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.073Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

0.65 mJ

Fet Type

2 N-Channel (Dual)

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.5V @ 1mA

Yayın Yılı

2015

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Number Of Elements

2

Jesd30 Code

R-PDSO-F8

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

125pf @ 15V

Gate Charge Qg Max Vgs

3nC @ 10V

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SMD, Flat Lead

Terminal Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

12A

Rds On Max Id Vgs

73m Ω @ 4.5A, 10V

Current Continuous Drain Id25

4.5A

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30V