QH8JA1TCR

Teknik Özellikler

Fabrika Tedarik Süresi

20 Weeks

Power Max

1.5W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.048Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

8.9 mJ

Fet Type

2 P-Channel (Dual)

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F8

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Ambalaj

Cut Tape (CT)

Drain To Source Voltage Vdss

30V

Vgsth Max Id

1.2V @ 1mA

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

10.2nC @ 4.5V

Input Capacitance Ciss Max Vds

720pF @ 10V

Drain Currentmax Abs Id

5A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ds Breakdown Voltagemin

20V

Rds On Max Id Vgs

38m Ω @ 5A, 4.5V

Current Continuous Drain Id25

5A

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

18A

Operating Mode

ENHANCEMENT MODE