MP6K14TCR

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

JESD-609 Kodu

e2

Drainsource On Resistancemax

0.032Ohm

Fet Type

2 N-Channel (Dual)

Drain Currentmax Abs Id

8A

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

7.3nC @ 5V

Kılıf / Paket

6-SMD, Flat Leads

Fet Feature

Logic Level Gate

Vgsth Max Id

2.5V @ 1mA

Terminal Kaplaması

TIN COPPER

Power Max

2W

Qualification Status

Not Qualified

Rds On Max Id Vgs

25m Ω @ 8A, 10V

Montaj

Surface Mount

Yayın Yılı

2011

Transistor Application

SWITCHING

Max Power Dissipation

2W

Drain To Source Voltage Vdss

30V

Case Connection

DRAIN

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

470pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-F6

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

10

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current Id

8A

Çalışma Sıcaklığı

150°C TJ

Pin Sayısı

6

Ds Breakdown Voltagemin

30V

Temel Parça No

*K14