MMSTA64T146

Teknik Özellikler

Collector Emitter Voltage Vceo

30V

Transistor Element Material

SILICON

Operating Temperature Max

150°C

Collector Base Voltage Vcbo

30V

Dc Current Gain Hfe Min Ic Vce

20000 @ 100mA 5V

Current Collector Cutoff Max

100nA ICBO

Parça Durumu

Not For New Designs

Element Configuration

Single

Yayın Yılı

1998

Nem Hassasiyeti (MSL)

1 (Unlimited)

Emitter Base Voltage Vebo

10V

Polarity

PNP

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Power Dissipation

200mW

Transistor Type

PNP - Darlington

Hfemin

10000

Fabrika Tedarik Süresi

7 Weeks

Transition Frequency

125MHz

Max Collector Current

300mA

Gain Bandwidth Product

125MHz

Pin Sayısı

3

Collectorbase Capacitancemax

7pF

Collectoremitter Breakdown Voltage

30V

Number Of Elements

1

HTS Kodu

8541.21.00.75

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Montaj

Surface Mount

Kurşunsuz

Lead Free

Ambalaj

Tape & Reel (TR)

Transistor Application

AMPLIFIER

Max Power Dissipation

200mW

Radyasyon Dayanımı

No

Terminal Pozisyonu

DUAL

Collectoremitter Saturation Voltage

1.5V

Continuous Collector Current

500mA

Currentcollector Ic Max

300mA

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Terminal Sayısı

3