HS8K1TB

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Configuration

COMPLEX

ECCN Kodu

EAR99

Yayın Yılı

2017

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

6nC, 7.4nC @ 10V

Drainsource On Resistancemax

0.02Ohm

Current Continuous Drain Id25

10A Ta 11A Ta

Fet Type

2 N-Channel (Dual)

Drain To Source Voltage Vdss

30V

Fet Feature

Standard

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-UDFN Exposed Pad

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Power Max

2W Ta

Fabrika Tedarik Süresi

16 Weeks

Drain Currentmax Abs Id

10A

Avalanche Energy Rating Eas

7.6 mJ

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

348pF 429pF @ 15V

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

2.5V @ 1mA

Terminal Formu

NO LEAD

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN SOURCE

Jesd30 Code

S-PDSO-N8

Transistor Element Material

SILICON

Terminal Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

40A

Parça Durumu

Active

Montaj Tipi

Surface Mount

Number Of Elements

2

Rds On Max Id Vgs

14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V