HP8KA1TB

Teknik Özellikler

Vgsth Max Id

2.5V @ 10mA

Fet Type

2 N-Channel (Dual)

Kılıf / Paket

8-PowerTDFN

Drain To Source Voltage Vdss

30V

Max Power Dissipation

3W

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

8

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

2550pF @ 15V

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

30V

Power Max

3W

Parça Durumu

Active

Number Of Elements

2

Fabrika Tedarik Süresi

20 Weeks

Gate Charge Qg Max Vgs

24nC @ 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

5m Ω @ 14A, 10V

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Yayın Yılı

2015

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.007Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Fet Feature

Logic Level Gate

Terminal Formu

FLAT

Continuous Drain Current Id

14A

Montaj

Surface Mount

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)