HP8K22TB

Teknik Özellikler

Terminal Formu

FLAT

Avalanche Energy Rating Eas

11.4 mJ

Case Connection

DRAIN SOURCE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Rds On Max Id Vgs

4.6m Ω @ 20A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0133Ohm

RoHS Durumu

ROHS3 Compliant

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

12A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

25W

Ds Breakdown Voltagemin

30V

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

27A 57A

Number Of Elements

2

Jesd30 Code

R-PDSO-F6

Gate Charge Qg Max Vgs

16.8nC @ 10V

Fabrika Tedarik Süresi

20 Weeks

Parça Durumu

Active

Yüzey Montaj

YES

Kılıf / Paket

8-PowerTDFN

Fet Type

2 N-Channel (Half Bridge)

Pulsed Drain Currentmax Idm

48A

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1080pF @ 15V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Terminal Sayısı

6

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE