EMX52T2R

Teknik Özellikler

Max Collector Current

100mA

Jesd30 Code

R-PDSO-F6

Çalışma Sıcaklığı

150°C TJ

Montaj

Surface Mount

Max Power Dissipation

150mW

Transition Frequency

350MHz

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Breakdown Voltage

50V

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Parça Durumu

Active

Yayın Yılı

2015

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

Dc Current Gain Hfe Min Ic Vce

120 @ 1mA 6V

Transistor Application

SWITCHING

Vce Saturation Max Ib Ic

300mV @ 5mA, 50mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

6

Frequency Transition

350MHz

Current Collector Cutoff Max

100nA ICBO

REACH Uyumluluk Kodu

not_compliant

Power Max

150mW

Transistor Type

2 NPN (Dual)

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS

Polaritychannel Type

NPN

Collectoremitter Breakdown Voltage

50V

Collector Emitter Voltage Vceo

300mV

Kılıf / Paket

SOT-563, SOT-666

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

10 Weeks