EMH61T2R

Teknik Özellikler

Kılıf / Paket

SOT-563, SOT-666

Terminal Sayısı

6

Max Power Dissipation

150mW

Max Breakdown Voltage

50V

Transistor Application

SWITCHING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Montaj

Surface Mount

Polaritychannel Type

NPN

Jesd30 Code

R-PDSO-F6

Ambalaj

Cut Tape (CT)

Collectoremitter Breakdown Voltage

50V

Number Of Elements

2

Frequency Transition

250MHz

Fabrika Tedarik Süresi

10 Weeks

Max Collector Current

50mA

Transition Frequency

250MHz

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

10k Ω

Transistor Type

2 NPN - Pre-Biased (Dual)

Yayın Yılı

2017

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Current Collector Cutoff Max

500nA

Power Max

150mW

Resistor Base R1

10k Ω

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collector Emitter Voltage Vceo

150mV