EMH4FHAT2R

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

250MHz

Yüzey Montaj

YES

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Transistor Type

2 NPN - Pre-Biased (Dual)

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Voltage Collector Emitter Breakdown Max

50V

Power Max

150mW

Current Collector Cutoff Max

500nA ICBO

Parça Durumu

Active

Resistor Base R1

10k Ω

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vce Saturation Max Ib Ic

300mV @ 1mA, 10mA

Power Dissipationmax Abs

0.15W

Dc Current Gain Hfe Min Ic Vce

100 @ 1mA 5V

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Jesd30 Code

R-PDSO-F6

Polaritychannel Type

NPN

Terminal Formu

FLAT

Ambalaj

Tape & Reel (TR)

Currentcollector Ic Max

100mA

Kılıf / Paket

SOT-563, SOT-666

Terminal Sayısı

6

Number Of Elements

2

Seri

Automotive, AEC-Q101

Frequency Transition

250MHz