EMH1FHAT2R

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

REACH Uyumluluk Kodu

not_compliant

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Dc Current Gain Hfe Min Ic Vce

56 @ 5mA 5V

Parça Durumu

Active

Power Max

150mW

Resistor Base R1

22k Ω

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

22k Ω

Transistor Type

2 NPN - Pre-Biased (Dual)

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

250MHz

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Frequency Transition

250MHz

Collectoremitter Voltagemax

50V

Number Of Elements

2

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Polaritychannel Type

NPN

Jesd30 Code

R-PDSO-F6

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Currentcollector Ic Max

100mA

Kılıf / Paket

SOT-563, SOT-666

Terminal Sayısı

6