EMD62T2R

Teknik Özellikler

Number Of Elements

2

Collector Emitter Voltage Vceo

150mV

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-563, SOT-666

Transition Frequency

250MHz

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application

SWITCHING

Terminal Sayısı

6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Resistor Base R1

47k Ω

Parça Durumu

Active

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Max Breakdown Voltage

50V

Transistor Element Material

SILICON

Resistor Emitter Base R2

47k Ω

Jesd30 Code

R-PDSO-F6

ECCN Kodu

EAR99

Frequency Transition

250MHz

Polaritychannel Type

NPN AND PNP

Max Collector Current

100mA

Terminal Formu

FLAT

Montaj Tipi

Surface Mount

Current Collector Cutoff Max

500nA

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Montaj

Surface Mount

Fabrika Tedarik Süresi

10 Weeks

Power Max

150mW

Collectoremitter Breakdown Voltage

50V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Max Power Dissipation

150mW