EMB75T2R

Teknik Özellikler

Transistor Application

SWITCHING

Max Power Dissipation

150mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Collector Current

100mA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Transistor Type

2 PNP - Pre-Biased (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

Power Max

150mW

Transistor Element Material

SILICON

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Resistor Emitter Base R2

47k Ω

Ambalaj

Cut Tape (CT)

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

ECCN Kodu

EAR99

Max Breakdown Voltage

50V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Kılıf / Paket

SOT-563, SOT-666

Fabrika Tedarik Süresi

10 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Jesd30 Code

R-PDSO-F6

Frequency Transition

250MHz

Collector Emitter Voltage Vceo

150mV

Polaritychannel Type

PNP

Number Of Elements

2

Resistor Base R1

4.7k Ω

Terminal Formu

FLAT

Collectoremitter Breakdown Voltage

50V