EMB61T2R

Teknik Özellikler

Max Breakdown Voltage

50V

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Ambalaj

Cut Tape (CT)

Resistor Emitter Base R2

10k Ω

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Transistor Type

2 PNP - Pre-Biased (Dual)

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Collector Current

50mA

Max Power Dissipation

150mW

Transistor Application

SWITCHING

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Transistor Element Material

SILICON

Power Max

150mW

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Resistor Base R1

10k Ω

Terminal Formu

FLAT

Number Of Elements

2

Polaritychannel Type

PNP

Collector Emitter Voltage Vceo

150mV

Collectoremitter Breakdown Voltage

50V

Frequency Transition

250MHz

Jesd30 Code

R-PDSO-F6

Parça Durumu

Active

Fabrika Tedarik Süresi

10 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

SOT-563, SOT-666