EMB59T2R

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

50V

Number Of Elements

2

Polaritychannel Type

PNP

Resistor Base R1

10k Ω

Terminal Formu

FLAT

Fabrika Tedarik Süresi

13 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Jesd30 Code

R-PDSO-F6

Kılıf / Paket

SOT-563, SOT-666

Frequency Transition

250MHz

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Ambalaj

Tape & Reel (TR)

Resistor Emitter Base R2

47k Ω

ECCN Kodu

EAR99

Power Max

150mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Transistor Application

SWITCHING

Transistor Type

2 PNP - Pre-Biased (Dual)

Currentcollector Ic Max

100mA