EMB51T2R

Teknik Özellikler

Kılıf / Paket

SOT-563, SOT-666

Parça Durumu

Active

Jesd30 Code

R-PDSO-F6

Fabrika Tedarik Süresi

10 Weeks

Current Collector Cutoff Max

500nA

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

250MHz

Frequency Transition

250MHz

Collector Emitter Voltage Vceo

150mV

Polaritychannel Type

PNP

Number Of Elements

2

Terminal Formu

FLAT

Resistor Base R1

22k Ω

Collectoremitter Breakdown Voltage

50V

Max Power Dissipation

150mW

Transistor Application

SWITCHING

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Collector Current

30mA

Transistor Type

2 PNP - Pre-Biased (Dual)

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Max

150mW

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Montaj

Surface Mount

Resistor Emitter Base R2

22k Ω

Vce Saturation Max Ib Ic

150mV @ 500μA, 5mA

Ambalaj

Cut Tape (CT)

ECCN Kodu

EAR99

Max Breakdown Voltage

50V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount