EM6K7T2CR

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Number Of Elements

2

Parça Durumu

Active

Fet Feature

Standard

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

200mA Ta

Rds On Max Id Vgs

1.2 Ω @ 200mA, 2.5V

Jesd30 Code

R-PDSO-F6

Input Capacitance Ciss Max Vds

25pF @ 10V

Çalışma Sıcaklığı

150°C TJ

Kılıf / Paket

SOT-563, SOT-666

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Fet Type

2 N-Channel (Dual)

Power Max

150mW

Drain Currentmax Abs Id

0.2A

Drainsource On Resistancemax

1.4Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Sayısı

6

Ds Breakdown Voltagemin

20V

Drain To Source Voltage Vdss

20V

Vgsth Max Id

1V @ 1mA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)