DTD143ECT116

Teknik Özellikler

Frequency Transition

200MHz

Fabrika Tedarik Süresi

13 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

200MHz

Tepe Reflow Süresi (maks. sn)

10

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Pin Sayısı

3

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Terminal Formu

GULL WING

Resistor Base R1

4.7 k Ω

Number Of Elements

1

Operating Temperature Max

150°C

Collector Emitter Voltage Vceo

300mV

Polaritychannel Type

NPN

Qualification Status

Not Qualified

HTS Kodu

8541.21.00.75

Collectoremitter Breakdown Voltage

50V

JESD-609 Kodu

e1

Vcesatmax

0.3 V

Transistor Type

NPN - Pre-Biased

Max Collector Current

500mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

47 @ 50mA 5V

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Max Power Dissipation

200mW

Montaj

Surface Mount

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Power Max

200mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Breakdown Voltage

50V

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Ambalaj

Tape & Reel (TR)