DTD143ECHZGT116

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Max

200mW

Currentcollector Ic Max

500mA

Transistor Type

NPN - Pre-Biased + Diode

Collectoremitter Voltagemax

50V

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Dc Current Gain Hfe Min Ic Vce

47 @ 50mA 5V

Configuration

SINGLE WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Seri

Automotive, AEC-Q101

Resistor Emitter Base R2

4.7 k Ω

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Ambalaj

Cut Tape (CT)

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Frequency Transition

200MHz

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Jesd30 Code

R-PDSO-G3

Parça Durumu

Active

Fabrika Tedarik Süresi

13 Weeks

Transition Frequency

200MHz

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Resistor Base R1

4.7 k Ω

Polaritychannel Type

NPN

Number Of Elements

1