DTD123YCHZGT116

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

50V

Number Of Elements

1

Polaritychannel Type

NPN

Resistor Base R1

2.2 k Ω

Terminal Formu

GULL WING

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.5

Fabrika Tedarik Süresi

8 Weeks

Current Collector Cutoff Max

500nA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

200MHz

Jesd30 Code

R-PDSO-G3

Parça Durumu

Active

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Frequency Transition

200MHz

RoHS Durumu

RoHS Compliant

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Resistor Emitter Base R2

10 k Ω

Seri

Automotive, AEC-Q101

ECCN Kodu

EAR99

Power Max

200mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

3 (168 Hours)

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Transistor Type

NPN - Pre-Biased + Diode

Currentcollector Ic Max

500mA