DTD123TSTP

Teknik Özellikler

Parça Durumu

Obsolete

Jesd30 Code

R-PSIP-T3

Current Collector Cutoff Max

500nA ICBO

Transition Frequency

200MHz

Tepe Reflow Süresi (maks. sn)

10

Kılıf / Paket

SC-72 Formed Leads

Frequency Transition

200MHz

Additional Feature

DIGITAL

Number Of Elements

1

Operating Temperature Max

150°C

Collector Emitter Voltage Vceo

300mV

Polaritychannel Type

NPN

Resistor Base R1

2.2 k Ω

JESD-609 Kodu

e1

Qualification Status

Not Qualified

Collectoremitter Breakdown Voltage

40V

HTS Kodu

8541.21.00.75

Dc Current Gain Hfe Min Ic Vce

100 @ 50mA 5V

Max Collector Current

500mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Max Power Dissipation

300mW

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

TIN SILVER COPPER

Transistor Application

SWITCHING

Vcesatmax

0.3 V

Transistor Type

NPN - Pre-Biased

Temel Parça No

DTD123

Transistor Element Material

SILICON

Power Max

300mW

Yayın Yılı

1998

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole