DTD123TCT116

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Power Max

200mW

Transistor Element Material

SILICON

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Max Power Dissipation

200mW

Configuration

SINGLE WITH BUILT-IN RESISTOR

Max Collector Current

500mA

Dc Current Gain Hfe Min Ic Vce

100 @ 50mA 5V

Transistor Type

NPN - Pre-Biased

Vcesatmax

0.3 V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Max Breakdown Voltage

40V

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR

Pin Sayısı

3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

200MHz

Current Collector Cutoff Max

500nA ICBO

Fabrika Tedarik Süresi

13 Weeks

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Frequency Transition

200MHz

HTS Kodu

8541.21.00.75

Collectoremitter Breakdown Voltage

40V

Qualification Status

Not Qualified

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

300mV

Number Of Elements

1

Operating Temperature Max

150°C

Resistor Base R1

2.2 k Ω