DTD123ECT116

Teknik Özellikler

Resistor Base R1

2.2 k Ω

Terminal Formu

GULL WING

Number Of Elements

1

Operating Temperature Max

150°C

Polaritychannel Type

NPN

Collector Emitter Voltage Vceo

300mV

Qualification Status

Not Qualified

HTS Kodu

8541.21.00.75

Collectoremitter Breakdown Voltage

50V

Frequency Transition

200MHz

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transition Frequency

200MHz

Current Collector Cutoff Max

500nA

Fabrika Tedarik Süresi

13 Weeks

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Pin Sayısı

3

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage

50V

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Ambalaj

Tape & Reel (TR)

Resistor Emitter Base R2

2.2 k Ω

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Vcesatmax

0.3 V

Transistor Type

NPN - Pre-Biased

Configuration

SINGLE WITH BUILT-IN RESISTOR

Max Collector Current

500mA

Dc Current Gain Hfe Min Ic Vce

39 @ 50mA 5V

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Max Power Dissipation

200mW

Montaj

Surface Mount

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Max

200mW

Transistor Element Material

SILICON