DTD114GCT116

Teknik Özellikler

Number Of Elements

1

Collector Emitter Voltage Vceo

300mV

Polaritychannel Type

NPN

Terminal Formu

GULL WING

Qualification Status

Not Qualified

Collectoremitter Breakdown Voltage

50V

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Collector Cutoff Max

500nA ICBO

Fabrika Tedarik Süresi

13 Weeks

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Frequency Transition

200MHz

Additional Feature

DIGITAL, BUILT-IN BIAS RESISTOR

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Resistor Emitter Base R2

10 k Ω

Max Breakdown Voltage

50V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Max Collector Current

500mA

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Max Power Dissipation

200mW

Transistor Type

NPN - Pre-Biased

Power Max

200mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

Montaj

Surface Mount

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED