DTD114ESTP

Teknik Özellikler

Resistor Base R1

10 k Ω

Collector Emitter Voltage Vceo

300mV

Number Of Elements

1

Akım Değeri

500mA

Collectoremitter Breakdown Voltage

50V

HTS Kodu

8541.21.00.75

Qualification Status

Not Qualified

JESD-609 Kodu

e1

Maks. Çalışma Sıcaklığı

150°C

Polarity

NPN

Voltage Rated Dc

50V

Frequency Transition

200MHz

Hfemin

56

Kılıf / Paket

SC-72 Formed Leads

Jesd30 Code

R-PSIP-T3

Parça Durumu

Obsolete

Current Collector Cutoff Max

500nA

Transition Frequency

200MHz

Tepe Reflow Süresi (maks. sn)

10

Kurşunsuz

Lead Free

Pin Sayısı

3

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Kodu

EAR99

Resistor Emitter Base R2

10 k Ω

Ambalaj

Tape & Box (TB)

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Transistor Type

NPN - Pre-Biased

Temel Parça No

DTD114

Element Configuration

Single

Vcesatmax

0.3 V

Max Power Dissipation

300mW

Transistor Application

SWITCHING

Terminal Kaplaması

TIN SILVER COPPER

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA 5V

Max Collector Current

500mA

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Montaj

Through Hole